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august 2006 rev 4 1/13 13 STB85NF3LL n-channel 30v - 0.006 ? - 85a - d 2 pa k low gate charge stripfet? ii power mosfet general features optimal r ds (on) x qg trade-off @4.5v conduction losses reduced switching losses reduced description this application specific power mosfet is the third genaration of stmicroelectronics unique ? single feature size? strip-based process. the resulting transistor shows the best trade-off between on-resistance and gate charge. when used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. this is extremely important for motherboards where fast switching and high efficiency are of paramount importance. applications switching application internal schematic diagram type v dss r ds(on) i d STB85NF3LL 30v <0.008 ? 85a d2pak 1 3 www.st.com order codes part number marking package packaging STB85NF3LLt4 b85nf3ll d2pak tape & reel
contents STB85NF3LL 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB85NF3LL electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20k ? )30v v gs gate-source voltage 16 v v gsm gate-source voltage pulsed (t p 50 s; duty cycle 25%; t j 150c) 20 v i d drain current (continuous) at t c = 25c 85 a i d drain current (continuous) at t c =100c 60 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 340 a p tot total dissipation at t c = 25c 110 w derating factor 0.73 w/c t stg storage temperature ?65 to 175 c t j max. operating junction temperature 175 c table 2. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 0.36 c/w r thja thermal resistance juncti on-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STB85NF3LL 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d = 40a v gs = 4.5v, i d = 40a 0.006 0.0075 0.008 0.0095 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds > i d(on) x r ds(on)max, i d = 40 a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f = 1 mhz, v gs = 0 2210 635 138 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v, i d = 60a v gs =4.5v 30 9 12.5 40 nc nc nc table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15v, i d = 30a, r g =4.7 ?, v gs =4.5v figure 12 on page 8 22 130 36.5 36.5 ns ns ns ns t d(off) t f t c off-voltage rise time fall time cross-over time vclamp =24v, i d =30a r g =4.7 ?, v gs = 4.5v figure 14 on page 8 32 23 40 ns ns ns
STB85NF3LL electrical characteristics 5/13 table 6. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 85 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 340 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 85a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 85a, di/dt = 100a/s, v dd = 15v, t j = 150c figure 14 on page 8 65 105 3.4 ns c a
electrical characteristics STB85NF3LL 6/13 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STB85NF3LL electrical characteristics 7/13 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STB85NF3LL 8/13 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform
STB85NF3LL package mechanical data 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STB85NF3LL 10/13 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
STB85NF3LL packaging mechanical data 11/13 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history STB85NF3LL 12/13 6 revision history table 7. revision history date revision changes 09-sep-2004 3 complete document 28-jul-2006 4 new template, soa updated
STB85NF3LL 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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